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All sic wafer for mosfet devices wholesalers & sic wafer for mosfet devices manufacturers come from members. We doesn't provide sic wafer for mosfet devices products or service, please contact them directly and verify their companies info carefully.
| Total 12 products from sic wafer for mosfet devices Manufactures & Suppliers |
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Brand Name:ZMKJ Model Number:4inch high purity Place of Origin:CHINA ... wafers About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:ZMSH Model Number:6Inch SiC Epitaxial Wafer Place of Origin:CHINA ...SiC Epitaxial Wafer Main Introduction 6Inch Ultra-High Voltage SiC Epitaxial Wafer 100–500 μm For MOSFET Devices This product is a high-purity, low-defect silicon carbide (SiC) epitaxial layer with a thickness ranging from 100 to 500 μm, grown on a 6-inch N-type 4H-SiC... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:PAM-XIAMEN Place of Origin:China .... We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. |
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian |
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Brand Name:ZG Model Number:MS Place of Origin:CHINA ... material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 |
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Henan |
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Brand Name:ANG Model Number:SIC-W05 Place of Origin:Guangdong, China ... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it |
Shenzhen A.N.G Technology Co., Ltd
Guangdong |
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Brand Name:HMT Place of Origin:CHINA ...SiC wafer manufacturer SiC substrate supplier Homray Material Technology offers semiconductor silicon carbide wafers,4H-SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device... |
Homray Material Technology
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Brand Name:Original Factory Model Number:IMW65R027M1H Place of Origin:CN SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip Product Description Of IMW65R027M1H IMW65R027M1H is 650V CoolSiC M1 SiC Trench Power Device, N-Channel Single FETs MOSFETs Transistors. Specification Of IMW65R027M1H Part ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ...SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC MOSFETs |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:Lingxun Place of Origin:China High Breakdown Voltage SiC MOSFET For Smart Home Device Power Supplies *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Place of Origin:China Product Description: Silicon carbide wafer boat is a wafer-growing device for wafers, which is made of silicon carbide materials.Wafer-growing device for wafers is the primary material in biology and semiconductor fields, whose quality and performance ... |
Wuxi Special Ceramic Electrical Co.,Ltd
Jiangsu |
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Brand Name:ZHENAN Model Number:Silicon Carbide Place of Origin:China ...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC... |
Zhenan Metallurgy Co., Ltd
Henan |
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Brand Name:onsemi Model Number:NCP51560BBDWR2G Place of Origin:USA ... output current capability. The NCP51560 is intended for fast switching to drive power MOSFETs and SiC MOSFET power switches. Short and matched propagation delays are also featured on the devices. The onsemi NCP51560 Isolated Dual-Channel Gate Driver has a |
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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