silicon high power mosfet

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ...

Brand Name:Infineon Technologies

Model Number:BF999 E6327

Place of Origin:CHINA

...MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? 100% new and originao with Advantage price High...

Model Number:PP Release Film

Brand Name:upasschina

Place of Origin:Shanghai, China

...Silicone Coated Release Liner Embossed Polypropylene (PP) film combines excellent material properties with the physical advantages of embossed structure, making it an ideal surface material for high-performance waterproof membranes. Key Advantages High flexibility - creped surface easily conforms to curved and irregular shapes Mechanical durability - textured surface enhances tensile strength Silicone...

Brand Name:Rixin

Model Number:DBP410

Place of Origin:China

...power companies, committed to change the world by solar energy. Formed in 2001, the company is headquartered in Wuhan, China and has a total of 500 employees. It has two ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are

Brand Name:ZMSH

Model Number:Silicon carbide wafer

Place of Origin:China

2inch 4inch 6inch 8inch 3C-N SiC Wafer Silicon Carbide Optoelectronic High-Power RF LEDS Description of 3C-N SiC Wafer: Compared to 4H-Sic, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, and thermal conductivity. and ...

Brand Name:Hanhui

Model Number:HH-424-126×1-xx-5050

Place of Origin:China

... The light transmittance of our lens is 92%. (2)High quality PC material We use high quality PC materials,and we also can specify the materials. (3)Convenient installation Screw installation, convenient and fast. (4)Waterproof Fitted with silicone gasket,

Brand Name:ADC

Model Number:HP-S009

Place of Origin:China

Silicon Real High Power 8000mAh Dual USB Waterproof Solar Power Bank with phone holder Product Features Special Designed for all mobile phone,camera,PSP,PDA/MP3/MP4 player and so on High quality Li-ion battery ,over 500 times life cycle. Uilt-in proprietary software to control and regulate temperature, voltage and current. Smart capacity display ,multiple protection ,safe and high efficiency. Clear & simple design ,mobile and portable. mini power

Brand Name:ZENITHSUN

Model Number:DR1

Place of Origin:Shenzhen,China

Silicon Coated Wire-Wound Power Resistors Without Mounting Fixture High Power Round Shape Cement Coated Wirewound Brake Resistors Structure: 1.The high temperature resistance ceramic tube is used as the resistance matrix,is wound with chrominum alloy wire ,then coated with high...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Brand Name:Aina

Model Number:AN-Solar Street-500w

Place of Origin:China

High Power 500W All in Two Solar Street Light with Aluminum Housing for Highway Feature High quality LED chip: Best in class, 50000 hours life time with high brightness illumination less than 5% light decay. Diamond reflector: Diamond reflector made from light-weight aluminum material increase brightness by up to 30% Long life solar panel: Grade a polycrystalline silicon...

Brand Name:Tianrui

Model Number:TRPTC

Place of Origin:China

...High Power PTC Heating Element Heater Life Long serive life Working temp. -40 to 70deg C Voltage 12V Power 200W Heating Material Ceramic PTC(Positive Temperature Coefficient) Bracket Material PA66(High temperature reinforced nylon) Insulation material Polyimide film Cable High temperature silicone rubber wire and Glass fiber silicone wire Size Feature * HIGH

Brand Name:GEZHI or OEM

Model Number:High Power Optical Circulator

Place of Origin:China

...High Power Circulator Low insertion loss 780-1080 nm High Power Optical Circulator for Fiber Amplifier High Power Optical Circulator GEZHI high power optical circulator is designed for high power applications. It features small size, bandwidth, stable performance, wide temperaturerange,high isolation, low loss, low standing wave,high The characteristics of intermodulation and high power Features & Applications of High Power

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...