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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER

Categories Silicon Carbide Ceramics
Brand Name: ZG
Model Number: MS
Certification: CE
Place of Origin: CHINA
MOQ: 10000 pieces
Price: Negotiation
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 10000 pieces per month
Delivery Time: 5-8 working days
Packaging Details: Strong wooden box for global shipping
Material: silicon carbide
Color: Black
Size: Customized
Feature: Excellent thermal conductivity Resistant to plasma shock Good temperature uniformity
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SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER


Silicon Carbide (SiC) Block


Silicon Carbide Block Good Thermal Conductivity Good Thermal Shock Resistance Good Abrasion Resistance

Due to our large output capacity and strong molding ability for customization production, our company has exported our products to many international markets. Our products are certified according to requirements of customers.

We continue to innovate, improve, and enhance as well as integrate the resources internally and externally to strengthen the flexibility of our company and the competitiveness of our products, and provide both old and new customers with best service.



Application:

  1. Grinding process of semiconductor silicon wafer

  2. Grinding process of LED sapphire wafer

  3. Thinning process of LED wafer


Feature requirements:

  1. Good thermal conductivity

  2. Good thermal shock resistance

  3. Good abrasion resistance


PerformanceUNITHS-AHS-PHS-XA
Grain Sizeμm4-104-104-10
Densityg/cm≥3.13.0-3.1>3.1
Hardness (Knoop)Kg/mm²280028002800
Flexural Strength 4 pt @ RTMPa*m1/2385240420
*10³1b/in²555555
Compressive Strength @ RTMpa3900 3900
*10³1b/in²560560
Modulus of Elasticity @ RTGpa410400410
*10³1b/in²595859
Weibull Modulus (2 parameter) 81912
Poisson Ratio 0.140.140.14
Fracture Toughness @ RT Double Torsion & SENBMPa*m1/2888
*1³1b/in²in½
Coefficient of Thermal Expansion RT to 700℃X10-6mm/mmK4.024.24.02
X10-6 in/in°F2.22.32.2
Maximum Service Temp.Air Mean Specific Heat @ RT°C190019001900
J/gmK0.670.590.67
Thermal Conductivity @ RTW/mK125.6110125.6
Btu/ft h°F72.66472.6
@200°CW/mK102.6 102.6
Btu/ft h°F59.359.3
@400°CW/mK77.5 77.5
Btu/ft h°F44.844.8
Permeability @ RT to 1000°C31MPa below No gas leakage
Electrical Resistivity @ RTOhm-cm102-106N/A102-106
Emissivity 0.90.90.9


Why better than others:


  1. Available in various specifications, also provide customized services

  2. Stable quality and fast delivery

  3. SiC block diameter from 120mm to 480mm in stock

  4. Save time of sample loading and unloading process

  5. Acceptable higher thinning rate

Silicon Carbide Block - SiC-Block-B-11

Quality SILICON CARBIDE BLOCK, GRINDING PROCESS OF SEMICONDUCTOR SILICON WAFER, LED SAPPHIRE WAFER, LED WAFER for sale
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