DC To 8GHz 6W Rf Transistor Amplifier Gallium Nitride 28V Original New Condition
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VBE Technology Shenzhen Co., Ltd.
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BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor
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...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor......
Wisdtech Technology Co.,Limited
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Ultra band 1000-2000MHz 47dBm Gain RF power amplifier Module for anti drone system
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.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects....
Shenzhen TeXin electronic Co., Limited
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ......
Anterwell Technology Ltd.
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High Current Gain NPN RF Transistor Slkor 2SC2757 T33 in SOT23 Package for RF Amplifier Applications
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...RF transistor is designed for low noise and high current-gain bandwidth product applications. It is suitable for use in VHF RF amplifiers, local oscillators, and mixers. The device features a compact SOT-23 package. Product Attributes Product Type: NPN RF Transistors......
Hefei Purple Horn E-Commerce Co., Ltd.
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AD9361BBCZ High Power Rf Transistor
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...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers......
Shenzhen Sai Collie Technology Co., Ltd.
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RF Power Transistors MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS
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...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF......
Mega Source Elec.Limited
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2SC1971 C1971 TO220 Epitaxial Planar NPN Transistor For RF Power Amplifiers
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2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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TDD 2*2W Dual Channel Digital Linear RF Power Amplifier 1420～1530M MIMO PA
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..., no damage to the power amplifier even during open circuit or short circuit. Specifications Model number: HCTD-4055-2 Product name: TDD 2*2W Dual Channel Digital Linear RF Power Amplifier 1420～1530M MIMO PA High linearity Number of channels: 2...
Hincn Limited
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Practical 40dBm RF Power Amplifier SMA/N CW Signal For GPS Jammer
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RF Power Amplifier 40dBm SMA/N CW Signal Product Description: RF Power Amplifier The RF Power Amplifier is designed for high power radio applications. It offers excellent gain 40dB, and input power from 0dBm to 10dBm. The supply current is 2500mA, and the package type is available as either surface mount or through hole. This high power radio amplifier......
Shenzhen Maixintong Technology Co., Ltd
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